www.belling.com.cn v2.0 page1 blm 2 0 06ne pb free product nchannel enhancementmodepowermosfet description theBLM2006NEusesadvancedtrenchtechnologytopr ovide excellentr ds(on) ,lowgatechargeandoperationwithgate voltagesaslowas2.5v.thisdeviceissuitablefo ruseasa loadswitchorinpwmapplications.itisesdprote sted. general features v ds =20v,i d =7a r ds(on) <27m@v gs =2.5v r ds(on) <21m@v gs =4.5v esdrating:2000vhbm highpowerandcurrenthandingcapability leadfreeproductisacquired surfacemountpackage application pwmapplication loadswitch schematic diagram marking and pin assignment sot23-6l top view package marking and ordering information device marking device device package reel size tape width quantity 2006ne BLM2006NE sot236l ?330mm 12mm 3000units absolute maximum ratings (ta=25 unless otherwise noted) parameter symbol limit unit drainsourcevoltage v ds 20 v gatesourcevoltage v gs 12 v draincurrentcontinuous i d 7 a draincurrentpulsed(note1) i dm 30 a maximumpowerdissipation p d 1.25 w operatingjunctionandstoragetemperaturerange t j ,t stg 55to150 thermal characteristic thermalresistance,junctiontoambient(note2) r ja 100 /w
www.belling.com.cn v2.0 page2 blm 2 0 06ne pb free product electrical characteristics (ta=25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drainsourcebreakdownvoltage bv dss v gs =0vi d =250a 20 v zerogatevoltagedraincurrent i dss v ds =20v,v gs =0v 1 a gatebodyleakagecurrent i gss v gs =10v,v ds =0v 10 a on characteristics (note 3) gatethresholdvoltage v gs(th) v ds =v gs ,i d =250a 0.55 0.7 0.95 v v gs =4.5v,i d =6.5a 15 21 m drainsourceonstateresistance r ds(on) v gs =2.5v,i d =5.5a 20 27 m forwardtransconductance g fs v ds =5v,i d =7a 20 s dynamic characteristics (note4) inputcapacitance c lss 1150 pf outputcapacitance c oss 185 pf reversetransfercapacitance c rss v ds =10v,v gs =0v, f=1.0mhz 145 pf switching characteristics (note 4) turnondelaytime t d(on) 6 ns turnonrisetime t r 13 ns turnoffdelaytime t d(off) 52 ns turnofffalltime t f v dd =10v,r l =1.35 v gs =5v,r gen =3 16 ns totalgatecharge q g 15 nc gatesourcecharge q gs 0.8 nc gatedraincharge q gd v ds =10v,i d =7a, v gs =4.5v 3.2 nc drain-source diode characteristics diodeforwardvoltage(note3) v sd v gs =0v,i s =1a 1.2 v diodeforwardcurrent(note2) i s 7 a notes: 1. repetitiverating:pulsewidthlimitedbymaximumj unctiontemperature. 2. surfacemountedonfr4board,t10sec. 3. pulsetest:pulsewidth300s,dutycycle2%. 4. guaranteedbydesign,notsubjecttoproduction
www.belling.com.cn v2.0 page3 blm 2 0 06ne pb free product typical electrical and thermal characteristics vgs rgen vin g vdd rl vout s d figure 1:switching test circuit t j junctiontemperature( ) figure 3 power dissipation vdsdrainsourcevoltage(v) figure 5 output characteristics v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms i d drain current (a) figure 6 drain-source on-resistance t j junctiontemperature( ) figure 8 drain-source on-resistance p d power(w) i d draincurrent(a) rdsononresistance(m ) normalizedonresistance
www.belling.com.cn v2.0 page4 blm 2 0 06ne pb free product vgsgatesourcevoltage(v) figure 7 transfer characteristics vgsgatesourcevoltage(v) figure 9 rdson vs vgs qggatecharge(nc) figure 11 gate charge vdsdrainsourcevoltage(v) figure 8 capacitance vs vds vdsdrainsourcevoltage(v) figure 10 capacitance vs vds vdsdrainsourcevoltage(v) figure 13 safe operation area i d draincurrent(a) vgsgatesourcevoltage(v) ccapacitance(pf) i s reversedraincurrent(a) rdson(m ) i d draincurrent(a)
www.belling.com.cn v2.0 page5 blm 2 0 06ne pb free product squarewavepluseduration(sec) figure 14 normalized maximum transient thermal impe dance r(t),normalizedeffective transientthermalimpedance
www.belling.com.cn v2.0 page6 blm 2 0 06ne pb free product sot23-6l package information
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